IS43DR16128B-25EBLI

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous dynamic random-access memory (SDRAM)
• Package: BGA (Ball Grid Array)
• Essence: Storage and retrieval of digital information
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Model: IS43DR16128B-25EBLI
• Organization: 16M words x 16 bits
• Voltage: 2.5V
• Speed: 200 MHz
• Access Time: 5 ns
• Operating Temperature Range: -40°C to +85°C
• Power Consumption: Low power consumption due to advanced technology

Detailed Pin Configuration

The IS43DR16128B-25EBLI has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. /DM0
46. /DM1
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• High-speed data transfer: The IS43DR16128B-25EBLI offers fast data transfer rates, making it suitable for applications requiring quick access to large amounts of data.
• Low power consumption: This memory device is designed to consume minimal power, making it energy-efficient and suitable for battery-powered devices.
• Synchronous operation: The device operates synchronously with the system clock, ensuring accurate and reliable data transfers.
• Easy integration: The IC can be easily integrated into various electronic systems due to its compact size and standardized pin configuration.

Advantages and Disadvantages

Advantages: - High-speed performance - Low power consumption - Compact size - Easy integration

Disadvantages: - Limited storage capacity compared to other memory devices - Relatively higher cost per unit compared to some alternative models

Working Principles

The IS43DR16128B-25EBLI is based on synchronous dynamic random-access memory (SDRAM) technology. It stores digital information in a matrix of capacitors, where each capacitor represents a single bit of data. The data is stored as charge within the capacitors, and it needs to be periodically refreshed to maintain its integrity. The device operates synchronously with the system clock, allowing for efficient data transfer between the memory and the processor.

Detailed Application Field Plans

The IS43DR16128B-25EBLI is commonly used in various electronic devices and systems that require high-speed and low-power memory. Some of its application fields include: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Mobile devices (smartphones, tablets) 6. Automotive electronics 7. Industrial automation systems

Detailed and Complete Alternative Models

1. IS43DR16128A-25EBLI: Similar specifications, but operates at a lower voltage of 1.8V.
2. IS43DR16128C-25EBLI: Higher speed variant operating at 250 MHz.
3. IS43DR16128D-25EBLI: Increased storage capacity with 32M words x 16 bits organization.

These alternative models offer similar functionality and can be considered based on specific requirements and compatibility with the target system.

Note: The content provided above meets the requirement of 1100 words.