IS42VM16160E-6BLI-TR

Product Overview

Category

IS42VM16160E-6BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS42VM16160E-6BLI-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of IS42VM16160E-6BLI-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42VM16160E-6BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of the product. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 6 ns
• Interface: Parallel
• Package Type: BGA (Ball Grid Array)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42VM16160E-6BLI-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /LDQM
40. /UDQM

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• Low power standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact package size
• Reliable performance
• Suitable for various electronic devices

Disadvantages

• Limited storage capacity compared to higher-capacity memory options
• Higher cost per unit compared to some alternative models

Working Principles

IS42VM16160E-6BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the device it is integrated into. The memory cells store data in the form of electrical charges, which can be accessed and manipulated through specific address and control signals.

Detailed Application Field Plans

IS42VM16160E-6BLI-TR finds applications in various electronic devices that require reliable and high-speed data storage and retrieval capabilities. Some of the potential application fields include:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Smartphones and tablets
5. Gaming consoles
6. Networking equipment

Detailed and Complete Alternative Models

• IS42S16160E-7TLI: Similar specifications, but with a higher access time of 7 ns.
• IS42S16400F-7TLI: Higher storage capacity (64 Megabits) with similar characteristics and package type.
• IS42S16320D-7TLI: Double data rate (DDR) SDRAM with increased data transfer rates.

These alternative models offer different specifications and features that cater to specific requirements and preferences.

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