IS42S81600D-7TL-TR

Product Overview

Category

IS42S81600D-7TL-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S81600D-7TL-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S81600D-7TL-TR lies in its ability to provide fast and efficient data storage and retrieval capabilities in electronic devices.

Packaging/Quantity

This product is typically packaged in reels and is available in large quantities to meet the demands of various industries.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 8M x 16 bits
• Speed: 7 nanoseconds (tRAC)
• Voltage: 3.3 volts
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0#
31. BA1#
32. CLK
33. CKE
34. CS#
35. DQM0#
36. DQM1#
37. DM0
38. DM1
39. VSS

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• Internal pipelined architecture for improved performance
• On-die termination (ODT) for signal integrity
• Programmable CAS latency for flexibility

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for the storage of extensive data.
• Low power consumption helps to prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.
• Reliable performance ensures consistent data storage and retrieval.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and grounding.
• Higher cost compared to other memory technologies.
• Limited scalability beyond a certain capacity.

Working Principles

IS42S81600D-7TL-TR operates based on the principles of synchronous dynamic random access memory. It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by sending address signals to select the desired location and reading or writing data through the parallel interface.

Detailed Application Field Plans

IS42S81600D-7TL-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S81600D-7TL-TR include: - MT48LC16M16A2P-75 - K4S561632H-UC60 - HYB18T512800AF-3S

These models offer similar specifications and functionalities, providing options for different design requirements.

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