IS42S32800D-75EB-TR

Product Overview

Category

IS42S32800D-75EB-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used as a memory component in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

IS42S32800D-75EB-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32800D-75EB-TR lies in its ability to provide fast and reliable data storage and retrieval for electronic devices.

Packaging/Quantity

IS42S32800D-75EB-TR is typically packaged in trays or reels and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabytes (MB)
• Organization: 32 Megabytes x 8 bits
• Speed: 75 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800D-75EB-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. CKE
16. A0
17. A1
18. A2
19. A3
20. A4
21. A5
22. A6
23. A7
24. A8
25. A9
26. A10
27. A11
28. A12
29. A13
30. A14
31. A15
32. BA0
33. BA1
34. VDDQ
35. DQM0
36. DQM1
37. VSS

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Internal pipelined architecture for high-speed operation

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient integration
• Wide operating temperature range ensures reliable performance in various environments

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

IS42S32800D-75EB-TR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient addressing and retrieval of data. The synchronous nature of the memory ensures that data is transferred in synchronization with an external clock signal, enabling high-speed operation.

Detailed Application Field Plans

IS42S32800D-75EB-TR finds applications in various fields, including: - Personal computers and laptops - Mobile devices such as smartphones and tablets - Networking equipment - Industrial automation systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to IS42S32800D-75EB-TR include: - MT48LC32M8A2P-75: 256MB SDRAM, 32 Megabytes x 8 bits, 75ns speed - K4S561632E-UC60: 256MB SDRAM, 32 Megabytes x 8 bits, 60ns speed - HYB39S256160FE-7.5: 256MB SDRAM, 32 Megabytes x 8 bits, 7.5ns speed

These alternative models offer similar specifications and can be used as substitutes depending on specific requirements.

In conclusion, IS42S32800D-75EB-TR is a high-performance synchronous DRAM module with a capacity of 256MB. It offers fast data access, low power consumption, and a compact package size. While it has advantages such