IS42S32800B-6BL-TR

Product Overview

Category

IS42S32800B-6BL-TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S32800B-6BL-TR is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S32800B-6BL-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabytes (MB)
• Organization: 32 Megabytes x 8 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32800B-6BL-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0#
31. BA1#
32. CLK
33. CKE
34. CS#
35. DQM0#
36. DQM1#
37. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption contributes to energy efficiency.
• Compact package size enables integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older device models.
• Higher cost compared to other memory technologies.
• Sensitivity to electrostatic discharge (ESD) requires careful handling during installation.

Working Principles

IS42S32800B-6BL-TR operates based on the principles of synchronous dynamic random-access memory. It utilizes a clock signal to synchronize data transfers between the memory module and the device it is installed in. The memory cells store data as electrical charges, which can be accessed and modified through specific addressing and control signals.

Detailed Application Field Plans

IS42S32800B-6BL-TR finds application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S32800B-6BL-TR include: - IS42S16160D - IS42S16320D - IS42S16400F - IS42S16800G - IS42S32160D - IS42S32320D - IS42S32400F - IS42S32800G

These models offer similar functionality and characteristics, providing options for different memory capacity requirements and compatibility with various devices.

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