IS42S32400F-6BI-TR

Product Overview

Category

IS42S32400F-6BI-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed operation: The IS42S32400F-6BI-TR offers fast data transfer rates, making it suitable for applications that require quick access to large amounts of data.
• Low power consumption: This DRAM module is designed to operate efficiently with minimal power consumption, contributing to longer battery life in portable devices.
• Compact package: The IS42S32400F-6BI-TR comes in a small form factor package, allowing for easy integration into space-constrained electronic devices.
• High-density storage: With a capacity of 32 megabits (4 megabytes), this DRAM module provides ample storage space for data-intensive applications.

Packaging/Quantity

The IS42S32400F-6BI-TR is typically packaged in tape and reel format, ensuring ease of handling during manufacturing processes. It is commonly available in quantities of 250 or 500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 4M words x 8 bits
• Supply Voltage: 3.3V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 86-ball BGA (Ball Grid Array)

Detailed Pin Configuration

The IS42S32400F-6BI-TR features an 86-ball BGA package with the following pin configuration:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. CKE
16. A0
17. A1
18. A2
19. A3
20. A4
21. A5
22. A6
23. A7
24. A8
25. A9
26. A10
27. A11
28. A12
29. A13
30. A14
31. A15
32. BA0
33. BA1
34. CLK
35. DQM0
36. DQM1
37. DM0
38. DM1
39. VREF
40. VDDQ
41. VSSQ
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC
49. NC
50. NC
51. NC
52. NC
53. NC
54. NC
55. NC
56. NC
57. NC
58. NC
59. NC
60. NC
61. NC
62. NC
63. NC
64. NC
65. NC
66. NC
67. NC
68. NC
69. NC
70. NC
71. NC
72. NC
73. NC
74. NC
75. NC
76. NC
77. NC
78. NC
79. NC
80. NC
81. NC
82. NC
83. NC
84. NC
85. NC
86. VDD

Functional Features

• Burst Mode: The IS42S32400F-6BI-TR supports burst mode operation, allowing for consecutive data transfers without the need for individual address commands.
• Auto Refresh: This DRAM module features an auto-refresh function that automatically refreshes the stored data at regular intervals, ensuring data integrity and reliability.
• Power Down Mode: The IS42S32400F-6BI-TR can enter a low-power power-down mode when not in use, further reducing power consumption.
• Self-Refresh Mode: In self-refresh mode, the module can retain data without requiring external refresh cycles, enabling power savings during idle periods.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Low power consumption contributes to extended battery life.
• Compact package facilitates integration into space-constrained devices.
• Ample storage capacity for data-intensive applications.

Disadvantages

• Requires careful handling during manufacturing due to the small form factor package.
• Limited compatibility with older device architectures that do not support SDRAM technology.

Working Principles

The IS42S32400F-