IS42S32400D-6T-TR

Product Overview

Category

IS42S32400D-6T-TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size
• Wide operating temperature range

Package

IS42S32400D-6T-TR is available in a small outline, thin profile (TSOP) package. This package type ensures easy integration into various electronic devices.

Essence

The essence of IS42S32400D-6T-TR lies in its ability to provide fast and reliable data storage and retrieval capabilities, making it an essential component in modern electronic devices.

Packaging/Quantity

IS42S32400D-6T-TR is typically packaged in reels, with each reel containing a specific quantity of units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Density: 128 Megabits (Mb)
• Organization: 4M words x 32 bits
• Operating Voltage: 3.3V
• Speed Grade: -6T
• Interface: Parallel
• Clock Frequency: 166 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. WE#
20. CAS#
21. RAS#
22. CS#
23. CKE
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. A8
33. A9
34. A10
35. A11
36. A12
37. A13
38. A14
39. A15
40. BA0
41. BA1
42. CLK

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Precharge power-down and active power-down modes for reduced power consumption

Advantages and Disadvantages

Advantages

• High-speed data access enables faster processing in electronic devices.
• Large storage capacity allows for the storage of extensive amounts of data.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.
• Wide operating temperature range ensures reliable performance in various environments.

Disadvantages

• Sensitive to electrical noise, requiring proper shielding and signal conditioning.
• Relatively higher cost compared to other memory technologies.
• Limited lifespan due to the finite number of read/write cycles.

Working Principles

IS42S32400D-6T-TR operates based on the principles of synchronous dynamic random access memory. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The data is accessed by applying appropriate voltage levels to the memory cells and reading or writing the charge stored in the capacitors.

Detailed Application Field Plans

IS42S32400D-6T-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

1. IS42S32800D-7TLI
2. MT48LC16M16A2P-75IT
3. K4S561632H-UC75

These alternative models offer similar functionality and specifications to IS42S32400D-6T-TR and can be considered as suitable replacements depending on specific requirements.

In conclusion, IS42S32400D-6T-TR is a high-performance synchronous DRAM product with a compact package size and wide operating temperature range. It provides fast data access, large storage capacity, and low power consumption, making it an essential component in various electronic devices. While it has advantages such as high-speed operation and low power consumption, it also has limitations like