IS42S16160D-75ETLI-TR

Product Overview

Category

IS42S16160D-75ETLI-TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is commonly used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S16160D-75ETLI-TR is typically packaged in a small form factor, such as a surface mount technology (SMT) package.

Essence

The essence of IS42S16160D-75ETLI-TR lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S16160D-75ETLI-TR is usually sold in reels or trays containing multiple units, depending on the manufacturer's packaging specifications.

Specifications

• Part Number: IS42S16160D-75ETLI-TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 75ns
• Interface: Parallel
• Package Type: Surface Mount Technology (SMT)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S16160D-75ETLI-TR is as follows:

1. VDD - Power Supply
2. VSS - Ground
3. A0-A18 - Address Inputs
4. DQ0-DQ15 - Data Inputs/Outputs
5. /RAS - Row Address Strobe
6. /CAS - Column Address Strobe
7. /WE - Write Enable
8. /CS - Chip Select
9. /OE - Output Enable
10. /BA0, /BA1 - Bank Address Inputs

Functional Features

• High-speed data access and transfer
• Low power consumption during operation
• Easy integration with various electronic devices
• Reliable performance in demanding applications
• Support for multiple banks for efficient memory management

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval capabilities
• Low power consumption
• Compact size for space-constrained designs
• Compatibility with a wide range of electronic devices
• Reliable performance in demanding applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Susceptible to data loss without proper power supply or refresh cycles
• Limited storage capacity compared to non-volatile memory options

Working Principles

IS42S16160D-75ETLI-TR operates based on the principles of dynamic random access memory (DRAM). It stores data as electrical charges in tiny capacitors within the memory cells. To read or write data, the memory controller sends appropriate signals to the address inputs, control inputs, and data inputs/outputs.

During a read operation, the memory controller activates the row and column addresses, enabling the selected memory cell's charge to be sensed and amplified. For a write operation, the controller provides the necessary data and control signals to store the desired information in the targeted memory cell.

Detailed Application Field Plans

IS42S16160D-75ETLI-TR finds extensive use in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Its high-speed data access and low power consumption make it suitable for applications that require quick and efficient data storage and retrieval.

Detailed and Complete Alternative Models

Some alternative models to IS42S16160D-75ETLI-TR include: - MT48LC16M16A2P-75IT - K4S561632H-UC75 - HYB39S16160T-7.5 - AS4C16M16SA-7TCN

These alternatives offer similar specifications and functionality, providing options for designers and manufacturers based on their specific requirements.

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