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IRG4PSC71KDPBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching applications in power supplies, motor control, and other high-power electronic systems - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: TO-247AC - Essence: Efficient and reliable power switching - Packaging/Quantity: Typically packaged in tubes or trays, quantity varies by manufacturer
Specifications: - Voltage Rating: 1200V - Current Rating: 75A - On-State Resistance: 80 mΩ - Gate-Source Voltage (Max): ±20V - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability - Low gate charge - Enhanced ruggedness - Fast switching speed - Avalanche energy specified
Advantages and Disadvantages: - Advantages: - High voltage and current handling - Low on-state resistance - Fast switching speed - Enhanced ruggedness - Disadvantages: - Higher cost compared to lower-rated MOSFETs - Requires careful handling due to high voltage capabilities
Working Principles: The IRG4PSC71KDPBF operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the conducting state, allowing current to flow through.
Detailed Application Field Plans: - Power supplies - Motor control systems - Renewable energy inverters - Industrial power electronics - Electric vehicle charging systems
Detailed and Complete Alternative Models: - Infineon IPP75R120C7 - STMicroelectronics STW75N120K3 - ON Semiconductor NCP5181
This comprehensive entry provides an in-depth understanding of the IRG4PSC71KDPBF, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de IRG4PSC71KDPBF em soluções técnicas
What is the IRG4PSC71KDPBF?
- The IRG4PSC71KDPBF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications.
What are the key features of the IRG4PSC71KDPBF?
- The IRG4PSC71KDPBF features low VCE(on), positive VCE(on) temperature coefficient, and high input impedance.
What are the typical applications of the IRG4PSC71KDPBF?
- Typical applications include motor drives, UPS systems, solar inverters, induction heating, and welding equipment.
What is the maximum voltage and current rating of the IRG4PSC71KDPBF?
- The IRG4PSC71KDPBF has a maximum voltage rating of 1200V and a maximum current rating of 75A.
What is the thermal resistance of the IRG4PSC71KDPBF?
- The thermal resistance junction-to-case (RthJC) is typically 0.35°C/W.
Does the IRG4PSC71KDPBF require a gate driver?
- Yes, the IRG4PSC71KDPBF requires an external gate driver to control its switching behavior effectively.
What are the recommended operating conditions for the IRG4PSC71KDPBF?
- The recommended operating temperature range is -55°C to 150°C, and the recommended gate-emitter voltage is typically 15V.
Is the IRG4PSC71KDPBF suitable for high-frequency switching applications?
- Yes, the IRG4PSC71KDPBF is suitable for high-frequency switching due to its fast switching speed and low switching losses.
Can the IRG4PSC71KDPBF be used in parallel configurations for higher current handling?
- Yes, the IRG4PSC71KDPBF can be used in parallel configurations to increase the overall current-handling capability.
Are there any specific precautions to consider when using the IRG4PSC71KDPBF in a technical solution?
- It's important to ensure proper heat sinking, gate drive circuit design, and protection against overvoltage and overcurrent conditions when integrating the IRG4PSC71KDPBF into a technical solution.