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IRF7104PBF

IRF7104PBF

Product Overview

Category

The IRF7104PBF belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Package

The IRF7104PBF is available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

The IRF7104PBF is typically packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 3.5A
  • On-Resistance (RDS(on)): 0.045 ohms
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRF7104PBF features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate charge
  • Enhanced 30V VGS rating
  • Improved RDS(on) characteristics

Advantages

  • High voltage capability
  • Low on-resistance reduces power dissipation
  • Fast switching speed allows for efficient operation

Disadvantages

  • Limited current handling capacity compared to higher-rated MOSFETs
  • Sensitivity to static discharge due to its high input impedance

Working Principles

The IRF7104PBF operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.

Detailed Application Field Plans

The IRF7104PBF finds extensive use in the following applications: - Switching power supplies - Motor control circuits - LED lighting systems - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

  • IRF7104L
  • IRF7104TRPBF
  • IRF7104GPBF
  • IRF7104SPBF

In conclusion, the IRF7104PBF power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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Liste 10 perguntas e respostas comuns relacionadas à aplicação de IRF7104PBF em soluções técnicas

  1. What is the IRF7104PBF?

    • The IRF7104PBF is a dual N-channel power MOSFET in a compact SO-8 package, commonly used for high-speed switching applications.
  2. What is the maximum voltage and current rating of the IRF7104PBF?

    • The IRF7104PBF has a maximum voltage rating of 20V and a continuous drain current of 5.3A.
  3. What are the typical applications of the IRF7104PBF?

    • The IRF7104PBF is commonly used in DC-DC converters, motor control, and power management applications due to its high-speed switching capabilities.
  4. What is the on-resistance of the IRF7104PBF?

    • The on-resistance of the IRF7104PBF is typically around 25mΩ, making it suitable for low-loss switching applications.
  5. Does the IRF7104PBF require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required to ensure proper thermal management.
  6. What is the gate charge of the IRF7104PBF?

    • The gate charge of the IRF7104PBF is typically around 7nC, which is important to consider for driving the MOSFET efficiently.
  7. Can the IRF7104PBF be used in automotive applications?

    • Yes, the IRF7104PBF is suitable for automotive applications, but it's important to ensure that it meets the specific requirements and standards for automotive use.
  8. What are the key thermal characteristics of the IRF7104PBF?

    • The IRF7104PBF has a low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
  9. Is the IRF7104PBF RoHS compliant?

    • Yes, the IRF7104PBF is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
  10. Are there any recommended alternatives to the IRF7104PBF for similar applications?

    • Some alternatives to the IRF7104PBF include the IRF7104TRPBF and other similar dual N-channel MOSFETs with comparable specifications.