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IPB65R225C7ATMA2
Product Overview
Category
The IPB65R225C7ATMA2 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage switching device in various electronic applications.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
Package
The IPB65R225C7ATMA2 is typically available in a TO-263-7 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 6.5A
- Power Dissipation (PD): 48W
- Gate-Source Voltage (VGS): ±20V
- On-Resistance (RDS(on)): 225mΩ
Detailed Pin Configuration
The IPB65R225C7ATMA2 has a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power losses and improves efficiency.
Advantages
- High voltage capability suitable for diverse applications
- Fast switching speed for improved performance
- Low on-resistance for reduced power losses
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- More complex drive circuitry required due to higher gate-source voltage
Working Principles
The IPB65R225C7ATMA2 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPB65R225C7ATMA2 is commonly used in: - Switching power supplies - Motor control - LED lighting - Solar inverters - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB65R225C7ATMA2 include: - IPB60R190C6 - Similar voltage and current ratings - IPB50R199CP - Lower voltage rating but similar current capability - IPB70R600CFD - Higher voltage rating and current handling capacity
In conclusion, the IPB65R225C7ATMA2 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of power management applications.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de IPB65R225C7ATMA2 em soluções técnicas
What is the maximum drain-source voltage of IPB65R225C7ATMA2?
- The maximum drain-source voltage of IPB65R225C7ATMA2 is 650V.
What is the typical on-state resistance of IPB65R225C7ATMA2?
- The typical on-state resistance of IPB65R225C7ATMA2 is 225mΩ.
What is the maximum continuous drain current of IPB65R225C7ATMA2?
- The maximum continuous drain current of IPB65R225C7ATMA2 is 45A.
What is the gate threshold voltage of IPB65R225C7ATMA2?
- The gate threshold voltage of IPB65R225C7ATMA2 is typically 2.5V.
What are the typical input and output capacitances of IPB65R225C7ATMA2?
- The typical input capacitance is 3200pF and the typical output capacitance is 1100pF.
What is the operating temperature range of IPB65R225C7ATMA2?
- The operating temperature range of IPB65R225C7ATMA2 is -55°C to 150°C.
Is IPB65R225C7ATMA2 suitable for automotive applications?
- Yes, IPB65R225C7ATMA2 is designed for automotive applications.
Does IPB65R225C7ATMA2 have built-in protection features?
- Yes, IPB65R225C7ATMA2 has built-in overcurrent protection and thermal shutdown features.
Can IPB65R225C7ATMA2 be used in high-frequency switching applications?
- Yes, IPB65R225C7ATMA2 is suitable for high-frequency switching due to its low on-state resistance.
What package type does IPB65R225C7ATMA2 come in?
- IPB65R225C7ATMA2 is available in a TO-263-7 package.