71V2546S100BG8

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics: High-speed, low-power, non-volatile
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tray packaging, available in various quantities

Specifications

• Memory Size: 256Kb (32K x 8)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 25ns
• Standby Current: 10µA (typical)
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The 71V2546S100BG8 IC has a total of 48 pins arranged as follows:

Pin Name Description 1 A0-A14 Address Inputs 2 CE1 Chip Enable Input 3 CE2 Chip Enable Input 4 OE Output Enable Input 5 WE Write Enable Input 6 VCC Power Supply 7 GND Ground 8 DQ0-DQ7 Data Input/Output 9 NC No Connection ...

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed operation: Allows for fast read and write access
• Low-power consumption: Reduces energy requirements
• Easy integration: Compatible with standard memory interfaces
• Reliable data retention: Ensures long-term storage of information

Advantages and Disadvantages

Advantages: - Non-volatile nature eliminates the need for external backup power - High-speed operation enables quick data access and transfer - Low-power consumption extends battery life in portable devices - Easy integration with existing memory systems simplifies design

Disadvantages: - Relatively small memory size compared to other storage options - Higher cost per bit compared to traditional volatile memory - Limited endurance for write cycles compared to other memory technologies

Working Principles

The 71V2546S100BG8 is based on non-volatile Static Random Access Memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The IC utilizes a ferroelectric material to store data, which retains its state even when power is removed. This allows for fast read and write operations without the need for external backup power.

Detailed Application Field Plans

The 71V2546S100BG8 is commonly used in applications that require high-speed, non-volatile memory. Some potential application fields include: - Industrial control systems - Automotive electronics - Medical equipment - Aerospace and defense systems - Communication infrastructure

Detailed and Complete Alternative Models

• 71V256SA10B - 256Kb nvSRAM, 10ns access time, SOJ package
• 23LC1024 - 1Mb SPI SRAM, 20MHz clock frequency, DIP package
• CY14B101L - 1Mb nvSRAM, 45ns access time, TSSOP package
• FM25V02A - 2Mb Serial F-RAM, 40MHz clock frequency, SOP package

These alternative models offer different specifications and features, providing flexibility for various application requirements.

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