2N7002TQ-7-F

Product Overview

Category

The 2N7002TQ-7-F belongs to the category of small signal field-effect transistors (FETs).

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

• Low threshold voltage
• High input impedance
• Small package size
• Low power consumption

Package

The 2N7002TQ-7-F is typically available in a SOT-23 package.

Essence

This FET serves as a fundamental component in electronic devices, enabling efficient signal control and amplification.

Packaging/Quantity

It is usually supplied in reels with varying quantities depending on the manufacturer's specifications.

Specifications

• Drain-Source Voltage (VDS): 60V
• Continuous Drain Current (ID): 115mA
• Total Power Dissipation (PD): 200mW
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 2N7002TQ-7-F features three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - G (Pin 1) - D (Pin 2) - S (Pin 3)

Functional Features

• Fast switching speed
• Low ON-resistance
• Enhanced ESD protection
• Compatibility with automated assembly processes

Advantages and Disadvantages

Advantages

• Small form factor
• Low power consumption
• Reliable switching performance
• ESD protection

Disadvantages

• Limited maximum current handling capability
• Sensitivity to static discharge

Working Principles

The 2N7002TQ-7-F operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Switching Circuits

The FET can be utilized in various switching circuits such as relay drivers, LED drivers, and motor control applications.

Amplification Circuits

In audio amplifiers and sensor interface circuits, the 2N7002TQ-7-F can be employed for signal amplification purposes.

Voltage Level Shifting

It can facilitate level shifting in digital logic circuits and interfacing between different voltage domains.

Detailed and Complete Alternative Models

• 2N7002DW-7-F: Similar specifications with a different package (SOT-363)
• BS170: Comparable FET with higher current handling capacity
• IRLML2502: Alternative with lower ON-resistance and higher power dissipation

This comprehensive entry provides an in-depth understanding of the 2N7002TQ-7-F, covering its basic information, specifications, functional features, application fields, and alternative models.