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S29GL128P11FFI020
Product Overview
Category
S29GL128P11FFI020 belongs to the category of flash memory devices.
Use
It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.
Characteristics
- Non-volatile: Retains data even when power is turned off.
- High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
- Fast read/write speeds: Enables quick access to stored data.
- Reliable: Provides high endurance and data retention capabilities.
- Low power consumption: Optimized for energy efficiency.
Package
The S29GL128P11FFI020 flash memory device comes in a compact package that ensures easy integration into electronic devices. It is available in a surface-mount TSOP package.
Essence
The essence of S29GL128P11FFI020 lies in its ability to provide reliable and high-capacity data storage in a compact form factor.
Packaging/Quantity
This flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.
Specifications
- Memory Type: NAND Flash
- Organization: 128Gbit (16GB) x 8 bits
- Interface: Parallel
- Supply Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Package Type: TSOP
Detailed Pin Configuration
The S29GL128P11FFI020 flash memory device has a total of 48 pins. The pin configuration is as follows:
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- WE#
- CE#
- RE#
- WP#
- RY/BY#
- VSS
- VCC
Functional Features
- Page Mode Operation: Allows fast programming and reading of data in page-sized increments.
- Block Erase Capability: Enables efficient erasure of large memory blocks.
- Hardware Data Protection: Provides write protection to prevent accidental data modification.
- Embedded Algorithms: Enhances performance and reliability through advanced error correction and wear leveling techniques.
Advantages and Disadvantages
Advantages
- High storage capacity
- Fast read/write speeds
- Reliable data retention
- Low power consumption
- Compact form factor
Disadvantages
- Limited endurance (compared to other non-volatile memory technologies)
- Higher cost per gigabyte compared to traditional hard disk drives
Working Principles
The S29GL128P11FFI020 flash memory device utilizes NAND flash technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is detected to determine the logic state of each memory cell.
Detailed Application Field Plans
The S29GL128P11FFI020 flash memory device finds applications in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics
Detailed and Complete Alternative Models
- S29GL064P11TFI010
- S29GL256P11TFI020
- S29GL512P11TFI020
- S29GL01GP11TFI020
- S29GL02GP11TFI020
These alternative models offer different storage capacities and may have variations in specifications, but they belong to the same product family and provide similar functionality.
In conclusion, the S29GL128P11FFI020 flash memory device is a high-capacity, reliable, and compact storage solution widely used in various electronic devices. Its fast read/write speeds and low power consumption make
Liste 10 perguntas e respostas comuns relacionadas à aplicação de S29GL128P11FFI020 em soluções técnicas
Sure! Here are 10 common questions and answers related to the application of S29GL128P11FFI020 in technical solutions:
Q: What is the S29GL128P11FFI020? A: The S29GL128P11FFI020 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage of 3.0 to 3.6 volts.
Q: What are the typical applications for S29GL128P11FFI020? A: The S29GL128P11FFI020 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.
Q: What is the interface of S29GL128P11FFI020? A: The S29GL128P11FFI020 uses a parallel interface with a 16-bit data bus and supports both asynchronous and synchronous read operations.
Q: What is the maximum operating frequency of S29GL128P11FFI020? A: The S29GL128P11FFI020 can operate at a maximum frequency of 66 MHz, allowing for fast data transfer rates.
Q: Does S29GL128P11FFI020 support sector erase operation? A: Yes, the S29GL128P11FFI020 supports sector erase operation, which allows for erasing a specific sector of memory without affecting other sectors.
Q: Can S29GL128P11FFI020 be used for code execution? A: Yes, the S29GL128P11FFI020 can be used for code execution as it supports random access read operations, making it suitable for storing program instructions.
Q: What is the typical endurance of S29GL128P11FFI020? A: The S29GL128P11FFI020 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.
Q: Does S29GL128P11FFI020 have built-in error correction capabilities? A: No, the S29GL128P11FFI020 does not have built-in error correction capabilities. However, it can be used in conjunction with external error correction techniques if required.
Q: Can S29GL128P11FFI020 operate in harsh environments? A: Yes, the S29GL128P11FFI020 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration.
Q: Is S29GL128P11FFI020 compatible with other flash memory devices? A: Yes, the S29GL128P11FFI020 is compatible with other flash memory devices that use a similar parallel interface and voltage range, allowing for easy integration into existing systems.
Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.