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NE85639R-T1
Product Overview
Category: RF Transistor
Use: Amplification of radio frequency signals
Characteristics: High gain, low noise figure, high linearity
Package: SOT-343
Essence: NPN silicon RF transistor
Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Frequency Range: 100 MHz to 3 GHz
- Power Gain: 15 dB
- Noise Figure: 0.7 dB
- Collector Current: 50 mA
- Collector-Base Voltage: 20 V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The NE85639R-T1 transistor has the following pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High power gain for amplifying weak RF signals
- Low noise figure for improved signal-to-noise ratio
- High linearity for faithful signal reproduction
Advantages and Disadvantages
Advantages: - High gain improves sensitivity in RF applications - Low noise figure enhances signal clarity - High linearity ensures faithful signal reproduction
Disadvantages: - Limited operating temperature range (-55°C to 150°C) - Relatively low collector-base voltage (20 V)
Working Principles
The NE85639R-T1 operates as a common-emitter NPN transistor, amplifying RF signals by controlling the current flow between the collector and emitter terminals through the base terminal.
Detailed Application Field Plans
The NE85639R-T1 is ideal for use in the following applications: - Radio communication systems - Radar systems - Wireless data transmission systems
Detailed and Complete Alternative Models
- NE85639T
- NE85639
In conclusion, the NE85639R-T1 RF transistor offers high gain, low noise figure, and high linearity, making it suitable for various RF amplification applications within the specified frequency range.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de NE85639R-T1 em soluções técnicas
What is NE85639R-T1?
- NE85639R-T1 is a high-frequency, low-noise amplifier transistor designed for use in various technical solutions.
What are the key features of NE85639R-T1?
- NE85639R-T1 features high gain, low noise figure, and excellent linearity, making it suitable for demanding RF applications.
In what technical solutions can NE85639R-T1 be used?
- NE85639R-T1 is commonly used in RF amplifiers, wireless communication systems, radar systems, and other high-frequency applications.
What is the typical operating voltage and current for NE85639R-T1?
- The typical operating voltage for NE85639R-T1 is around 5V, with a typical current of 10-20mA.
What is the maximum frequency range for NE85639R-T1?
- NE85639R-T1 has a maximum frequency range of up to several gigahertz, making it suitable for high-frequency applications.
Does NE85639R-T1 require any special heat dissipation measures?
- Yes, NE85639R-T1 may require proper heat sinking or thermal management to ensure optimal performance, especially at higher frequencies and power levels.
Are there any recommended biasing configurations for NE85639R-T1?
- Yes, typical biasing configurations include common-emitter or common-base configurations, depending on the specific application requirements.
What are the typical gain and noise figure specifications for NE85639R-T1?
- NE85639R-T1 typically offers a gain of 15-25 dB and a noise figure of 0.5-1.5 dB, depending on the operating conditions.
Can NE85639R-T1 be used in low-power applications?
- Yes, NE85639R-T1 can be used in low-power applications, but its performance excels in moderate to high-power RF systems.
Are there any known compatibility issues with NE85639R-T1 in certain circuit configurations?
- While NE85639R-T1 is generally compatible with standard RF circuit configurations, it's important to consider impedance matching and stability in specific designs to avoid potential issues.