ATF-54143-TR2G

Product Overview

Category

ATF-54143-TR2G belongs to the category of high-frequency, low-noise enhancement mode Pseudomorphic HEMT (pHEMT) transistors.

Use

These transistors are commonly used in applications requiring high-frequency amplification, such as in wireless communication systems, radar systems, and satellite communication equipment.

Characteristics

• High-frequency operation
• Low noise figure
• High gain
• High linearity

Package

The ATF-54143-TR2G is typically available in a surface-mount SOT-343 package.

Essence

The essence of ATF-54143-TR2G lies in its ability to provide high-frequency amplification with low noise and high gain, making it suitable for demanding communication and radar applications.

Packaging/Quantity

The ATF-54143-TR2G is usually supplied in reels containing a specific quantity, typically 3000 units per reel.

Specifications

• Frequency Range: 100 MHz to 40 GHz
• Noise Figure: 0.3 dB at 2 GHz
• Power Gain: 13 dB at 2 GHz
• Input/Output Impedance: 50 ohms
• Maximum RF Input Power: 20 dBm

Detailed Pin Configuration

The ATF-54143-TR2G features a 4-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S) 4. Ground (GND)

Functional Features

• High-frequency amplification
• Low noise figure
• High gain
• Enhanced linearity

Advantages

• Wide frequency range coverage
• Low noise figure for improved signal quality
• High gain for signal amplification
• Suitable for high-frequency applications

Disadvantages

• Sensitive to static discharge
• Higher cost compared to some alternative models

Working Principles

The ATF-54143-TR2G operates based on the principles of Pseudomorphic High Electron Mobility Transistor (pHEMT) technology, which allows for high-frequency amplification with low noise and high gain. When biased and connected in the appropriate circuit, the transistor amplifies the input RF signal while maintaining low noise and high linearity.

Detailed Application Field Plans

The ATF-54143-TR2G is well-suited for use in the following application fields: - Wireless communication systems - Radar systems - Satellite communication equipment - Test and measurement equipment for high-frequency signals

Detailed and Complete Alternative Models

Some alternative models to ATF-54143-TR2G include: - MGA-86576 from Avago Technologies - BFP740ESD from Infineon Technologies - CGY2108UH/C1 from NXP Semiconductors

In conclusion, ATF-54143-TR2G is a high-frequency, low-noise pHEMT transistor that offers excellent performance characteristics for various communication and radar applications. Its wide frequency range coverage, low noise figure, and high gain make it a preferred choice for demanding high-frequency amplification needs.

[Word Count: 411]