BDW83B-S

Product Overview

Belongs to: Power Transistors
Category: Electronic Components
Use: Amplification and switching of electronic signals
Characteristics: High power handling capacity, low collector-emitter saturation voltage
Package: TO-220AB
Essence: NPN silicon epitaxial-base planar type transistor
Packaging/Quantity: Available in reels or tubes, quantity varies by manufacturer

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 15A
• Power Dissipation (PD): 80W
• DC Current Gain (hFE): 25 - 160
• Transition Frequency (fT): 4MHz

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed
• Good thermal stability

Advantages and Disadvantages

Advantages: - High power handling capacity - Low collector-emitter saturation voltage - Fast switching speed

Disadvantages: - Sensitivity to overvoltage conditions - Limited frequency response

Working Principles

The BDW83B-S operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

1. Audio Amplification: Used in audio amplifiers for high-power applications.
2. Switching Circuits: Employed in power switching circuits due to its high current handling capability.
3. Motor Control: Utilized in motor control circuits for efficient power management.

Detailed and Complete Alternative Models

1. BDW83C-S
2. BDW83D-S
3. BDW83E-S

Note: The alternative models listed above are similar in characteristics and package type but may have different specifications.

This comprehensive entry provides a detailed overview of the BDW83B-S power transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.