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BLF888BS,112
Product Overview
Category
The BLF888BS,112 belongs to the category of RF power transistors.
Use
It is used in high-power amplifiers for various applications such as radio frequency (RF) communication systems and radar systems.
Characteristics
- High power handling capability
- Broadband operation
- High efficiency
- Excellent linearity
Package
The BLF888BS,112 comes in a ceramic package, which provides excellent thermal performance and reliability.
Essence
This product is essential for achieving high power amplification in RF communication and radar systems.
Packaging/Quantity
The BLF888BS,112 is typically packaged individually and is available in various quantities depending on the supplier.
Specifications
- Frequency Range: 470 - 860 MHz
- Output Power: 125 W
- Gain: 17 dB
- Efficiency: 30%
- Operating Voltage: 32 V
- Operating Temperature: -40°C to +150°C
Detailed Pin Configuration
The BLF888BS,112 has a detailed pin configuration with specific connections for gate, drain, and source terminals. Refer to the datasheet for the exact pinout details.
Functional Features
- High power gain
- Wide frequency coverage
- High efficiency at high power levels
- Good linearity for signal fidelity
Advantages
- Suitable for broadband applications
- High power handling capability
- Reliable ceramic packaging for thermal management
Disadvantages
- Higher cost compared to lower power transistors
- Requires careful matching and biasing for optimal performance
Working Principles
The BLF888BS,112 operates based on the principles of RF power amplification using field-effect transistor (FET) technology. It amplifies input RF signals to deliver high-power output with minimal distortion.
Detailed Application Field Plans
The BLF888BS,112 is widely used in: - Base stations for cellular communication - Broadcast transmitters - Radar systems - Industrial RF heating applications
Detailed and Complete Alternative Models
- MRF151G
- MRFE6VP61K25H
- BLF578XR
Note: The alternative models listed above are similar RF power transistors that can be used as substitutes for the BLF888BS,112 in various applications.
In conclusion, the BLF888BS,112 is a high-performance RF power transistor suitable for demanding applications requiring high power amplification across a broad frequency range. Its characteristics, specifications, and functional features make it an essential component in modern RF communication and radar systems.
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Liste 10 perguntas e respostas comuns relacionadas à aplicação de BLF888BS,112 em soluções técnicas
What is the maximum power output of BLF888BS,112?
- The maximum power output of BLF888BS,112 is typically 1500 watts.
What is the operating frequency range of BLF888BS,112?
- BLF888BS,112 operates in the frequency range of 470-860 MHz.
What is the typical gain of BLF888BS,112?
- The typical gain of BLF888BS,112 is around 18-20 dB.
What are the recommended supply voltage and current for BLF888BS,112?
- The recommended supply voltage for BLF888BS,112 is 32 V, with a typical current of 15 A.
What is the thermal resistance of BLF888BS,112?
- The thermal resistance of BLF888BS,112 is typically 0.35°C/W.
What are the typical input and output impedance values for BLF888BS,112?
- The typical input and output impedance values for BLF888BS,112 are 50 ohms.
What are the key applications for BLF888BS,112?
- BLF888BS,112 is commonly used in high-power broadcast transmitters, digital TV transmitters, and other RF amplification applications.
What are the recommended thermal management guidelines for BLF888BS,112?
- It is recommended to use proper heat sinking and cooling solutions to maintain the junction temperature within the specified limits.
What are the protection features available in BLF888BS,112?
- BLF888BS,112 includes protection against overcurrent, overvoltage, and overtemperature conditions.
Are there any specific layout considerations for using BLF888BS,112 in a design?
- Proper RF layout techniques, grounding, and decoupling practices should be followed to ensure optimal performance and stability when using BLF888BS,112 in a design.