BLF6G20LS-110,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A (LFPAK56) - Essence: High-performance RF power transistor for use in high-power amplifiers - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2110 - 2170 MHz - Output Power: 20 W - Gain: 16.5 dB - Efficiency: 45% - Voltage: 32 V - Current: 3.5 A - Operating Temperature Range: -40°C to +150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected - Pin 6: Source

Functional Features: - High linearity and efficiency - Excellent thermal stability - Integrated ESD protection - RoHS compliant

Advantages and Disadvantages: - Advantages: - High power output - Wide operating temperature range - Good thermal stability - Disadvantages: - Limited frequency range - Higher cost compared to lower power transistors

Working Principles: The BLF6G20LS-110,112 operates on the principle of amplifying radio frequency signals by controlling the flow of current between the source and drain terminals using the gate terminal.

Detailed Application Field Plans: This RF power transistor is suitable for use in base station amplifiers, repeaters, and other high-power RF applications in the 2.1 GHz frequency band.

Detailed and Complete Alternative Models: - BLF6G20LS-110,112 is part of the BLF6GxxLS series, which includes various models with different frequency ranges and power levels. Alternative models within the same series can be chosen based on specific application requirements.

This comprehensive entry provides a detailed overview of the BLF6G20LS-110,112, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.