Veja as especificações para detalhes do produto.
BLF6G10LS-200RN,11
Product Category: RF Power Transistor
Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency, low distortion - Package: SMD (Surface Mount Device) - Essence: Power amplification for RF applications - Packaging/Quantity: Tape and reel, 800 units per reel
Specifications: - Frequency Range: 2400 - 2500 MHz - Output Power: 10W - Gain: 13 dB - Efficiency: 55% - Voltage: 28V - Current: 1.5A
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected
Functional Features: - High linearity - High efficiency - Excellent thermal stability - Integrated ESD protection
Advantages: - High power output - Wide frequency range - Compact SMD package - Good thermal performance
Disadvantages: - Requires careful handling due to ESD sensitivity - Higher cost compared to lower power transistors
Working Principles: The BLF6G10LS-200RN,11 operates based on the principles of field-effect transistors, utilizing a combination of voltage and current to amplify RF signals with high efficiency and linearity.
Detailed Application Field Plans: - Wireless communication systems - Radar systems - Satellite communication - Industrial, scientific, and medical (ISM) applications
Detailed and Complete Alternative Models: - BLF6G20LS-250RN,11 - BLF7G15LS-300RN,11 - BLF8G25LS-350RN,11
This comprehensive entry provides an in-depth understanding of the BLF6G10LS-200RN,11 RF Power Transistor, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Liste 10 perguntas e respostas comuns relacionadas à aplicação de BLF6G10LS-200RN,11 em soluções técnicas
What is the operating frequency range of BLF6G10LS-200RN,11?
- The operating frequency range of BLF6G10LS-200RN,11 is typically from 2110 MHz to 2170 MHz.
What is the maximum output power of BLF6G10LS-200RN,11?
- The maximum output power of BLF6G10LS-200RN,11 is approximately 37 dBm.
What is the typical gain of BLF6G10LS-200RN,11?
- The typical gain of BLF6G10LS-200RN,11 is around 17 dB.
What is the recommended supply voltage for BLF6G10LS-200RN,11?
- The recommended supply voltage for BLF6G10LS-200RN,11 is 28 V.
What is the typical efficiency of BLF6G10LS-200RN,11?
- The typical efficiency of BLF6G10LS-200RN,11 is approximately 45%.
What is the input and output impedance of BLF6G10LS-200RN,11?
- The input and output impedance of BLF6G10LS-200RN,11 is 50 ohms.
Is BLF6G10LS-200RN,11 suitable for use in base station amplifiers?
- Yes, BLF6G10LS-200RN,11 is designed for use in base station amplifiers.
Does BLF6G10LS-200RN,11 require external matching networks?
- No, BLF6G10LS-200RN,11 is internally matched and does not require external matching networks.
What is the package type of BLF6G10LS-200RN,11?
- BLF6G10LS-200RN,11 comes in a ceramic SMD package.
Are there any specific thermal considerations for using BLF6G10LS-200RN,11?
- It is recommended to use proper thermal management techniques to ensure optimal performance of BLF6G10LS-200RN,11, such as adequate heat sinking and airflow.