AS6C8008-55BINTR

Product Overview

Category

AS6C8008-55BINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance
• Compact package size

Package

AS6C8008-55BINTR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS6C8008-55BINTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS6C8008-55BINTR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Operating Voltage: 3.0V - 3.6V
• Access Time: 55ns
• Organization: 1M x 8 bits
• Standby Current: 10μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS6C8008-55BINTR has a total of 28 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. DQ0 - Data Input/Output
11. DQ1 - Data Input/Output
12. DQ2 - Data Input/Output
13. DQ3 - Data Input/Output
14. DQ4 - Data Input/Output
15. DQ5 - Data Input/Output
16. DQ6 - Data Input/Output
17. DQ7 - Data Input/Output
18. WE - Write Enable
19. OE - Output Enable
20. CE - Chip Enable
21. VCC - Power Supply
22. NC - No Connection
23. NC - No Connection
24. NC - No Connection
25. NC - No Connection
26. NC - No Connection
27. NC - No Connection
28. NC - No Connection

Functional Features

• Random access memory (RAM) functionality
• Non-volatile storage
• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into various electronic systems

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact package size
• Reliable performance
• Suitable for a wide range of applications

Disadvantages

• Limited storage capacity compared to other memory technologies
• Volatile memory, requiring constant power supply to retain data

Working Principles

AS6C8008-55BINTR operates based on the principles of dynamic random access memory (DRAM). It stores digital information in capacitors within its memory cells, which are organized in a matrix-like structure. The stored information is accessed by applying appropriate voltage levels to the address lines and control signals.

Detailed Application Field Plans

AS6C8008-55BINTR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones and smartphones - Tablets and handheld devices - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS6C8008-55BINTR that offer similar functionality and specifications include: - AS6C4008-55BINTR - AS6C8016-55BINTR - AS6C16008-55BINTR - AS6C32016-55BINTR - AS6C64032-55BINTR

These alternative models can be considered based on specific requirements and compatibility with the target system.

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