Alliance Memory, Inc.
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AS4C32M16D2B-25BIN

AS4C32M16D2B-25BIN

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory module
  • Characteristics:
    • High-speed operation
    • Low power consumption
    • Large storage capacity
  • Package: BGA (Ball Grid Array)
  • Essence: Dynamic Random Access Memory (DRAM)
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Part Number: AS4C32M16D2B-25BIN
  • Organization: 32M words x 16 bits x 2 banks
  • Operating Voltage: 2.5V ± 0.2V
  • Clock Frequency: 200 MHz
  • Access Time: 12.5 ns
  • Refresh: Auto-refresh and self-refresh modes
  • Interface: Double Data Rate (DDR) Synchronous DRAM
  • Temperature Range: Commercial (0°C to +70°C)

Detailed Pin Configuration

The AS4C32M16D2B-25BIN has a total of 96 pins arranged in a specific configuration. The pinout is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. VDD
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. VSS
  37. VDD
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. DQM0
  45. DQM1
  46. DM0
  47. DM1
  48. VSS
  49. VDD
  50. CLK
  51. CKE
  52. ODT
  53. RESET#
  54. VREF
  55. VSS
  56. VDD
  57. DQ16
  58. DQ17
  59. DQ18
  60. DQ19
  61. DQ20
  62. DQ21
  63. DQ22
  64. DQ23
  65. DQ24
  66. DQ25
  67. DQ26
  68. DQ27
  69. DQ28
  70. DQ29
  71. DQ30
  72. DQ31
  73. VSS
  74. VDD
  75. A16
  76. A17
  77. A18
  78. A19
  79. A20
  80. A21
  81. A22
  82. A23
  83. A24
  84. A25
  85. A26
  86. A27
  87. A28
  88. A29
  89. A30
  90. A31
  91. VSS
  92. VDD
  93. NC
  94. NC
  95. VSS
  96. VDD

Functional Features

  • High-speed operation allows for quick data access and transfer.
  • Low power consumption helps in reducing energy usage.
  • Large storage capacity enables the storage of a significant amount of data.
  • Auto-refresh and self-refresh modes ensure data integrity during power fluctuations.

Advantages

  • Fast data access and transfer speeds enhance system performance.
  • Low power consumption prolongs battery life in portable devices.
  • Large storage capacity accommodates extensive data storage requirements.
  • Auto-refresh and self-refresh modes maintain data integrity during power interruptions.

Disadvantages

  • Higher cost compared to other memory technologies.
  • Limited durability due to the nature of dynamic memory cells.
  • Requires periodic refresh cycles to retain data, which can impact overall system performance.

Working Principles

The AS4C32M16D2B-25BIN is based on Dynamic Random Access Memory (DRAM) technology. It stores data in capacitors within each memory cell, which needs to be periodically refreshed to maintain data integrity. The memory module communicates with the system through a synchronous interface, allowing for high-speed data transfer.

Detailed Application Field Plans

The AS4C32M16D2B-25BIN memory module finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and

Liste 10 perguntas e respostas comuns relacionadas à aplicação de AS4C32M16D2B-25BIN em soluções técnicas

Sure! Here are 10 common questions and answers related to the application of AS4C32M16D2B-25BIN in technical solutions:

  1. Question: What is the capacity of the AS4C32M16D2B-25BIN memory module?
    Answer: The AS4C32M16D2B-25BIN has a capacity of 512 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The AS4C32M16D2B-25BIN operates at a voltage range of 2.5V ± 0.2V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The AS4C32M16D2B-25BIN supports a maximum clock frequency of 400 MHz.

  4. Question: Can this memory module be used in both desktop and laptop computers?
    Answer: Yes, the AS4C32M16D2B-25BIN can be used in both desktop and laptop computers that support DDR2 SDRAM.

  5. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the AS4C32M16D2B-25BIN does not support ECC.

  6. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the AS4C32M16D2B-25BIN is 5.

  7. Question: Can this memory module be used in dual-channel configurations?
    Answer: Yes, the AS4C32M16D2B-25BIN can be used in dual-channel configurations for increased performance.

  8. Question: Is this memory module compatible with Intel and AMD processors?
    Answer: Yes, the AS4C32M16D2B-25BIN is compatible with both Intel and AMD processors that support DDR2 SDRAM.

  9. Question: What is the form factor of this memory module?
    Answer: The AS4C32M16D2B-25BIN has a 240-pin DIMM (Dual In-Line Memory Module) form factor.

  10. Question: Can this memory module be used in servers or workstations?
    Answer: Yes, the AS4C32M16D2B-25BIN can be used in servers or workstations that require DDR2 SDRAM memory modules.

Please note that these answers are specific to the AS4C32M16D2B-25BIN memory module and may not apply to other similar products.