AS4C256M16D3LB-12BCN

Product Overview

Category

AS4C256M16D3LB-12BCN belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and high-performance workstations.

Characteristics

• High-speed data access and retrieval capabilities
• Large storage capacity
• Volatile memory (data is lost when power is turned off)
• Requires periodic refreshing to maintain data integrity

Package

AS4C256M16D3LB-12BCN is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of AS4C256M16D3LB-12BCN lies in its ability to provide fast and reliable data storage and retrieval for electronic devices.

Packaging/Quantity

AS4C256M16D3LB-12BCN is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: AS4C256M16D3LB-12BCN
• Memory Type: DDR3 SDRAM
• Organization: 256M words x 16 bits
• Operating Voltage: 1.5V
• Speed Grade: PC3-12800 (DDR3-1600)
• CAS Latency: 12
• Refresh Rate: 7.8μs (64ms refresh interval)

Detailed Pin Configuration

AS4C256M16D3LB-12BCN follows the standard DDR3 SDRAM pin configuration. It consists of multiple pins for various functions, including power supply, address inputs, data inputs/outputs, control signals, and clock inputs.

For a detailed pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer rates
• Support for advanced memory management features
• Low power consumption
• Error correction capabilities (ECC)
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speeds
• Large storage capacity
• Compatibility with a wide range of electronic devices
• Advanced memory management features
• Error correction capabilities for enhanced data reliability

Disadvantages

• Volatile memory (data is lost when power is turned off)
• Requires periodic refreshing to maintain data integrity
• Relatively higher power consumption compared to non-volatile memory types

Working Principles

AS4C256M16D3LB-12BCN operates based on the principles of dynamic random-access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller sends appropriate signals to access the desired data from the memory array.

Detailed Application Field Plans

AS4C256M16D3LB-12BCN finds extensive application in various fields, including: - Personal computers - Laptops and notebooks - Servers - Workstations - Networking equipment - Embedded systems - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to AS4C256M16D3LB-12BCN include: - AS4C256M16D3LB-12BIN - AS4C256M16D3LB-12BEN - AS4C256M16D3LB-12BCN-T - AS4C256M16D3LB-12BIN-T - AS4C256M16D3LB-12BEN-T

These models offer similar specifications and functionality, providing flexibility in choosing the most suitable option for specific requirements.

In conclusion, AS4C256M16D3LB-12BCN is a DDR3 SDRAM module that offers high-speed data access, large storage capacity, and advanced memory management features. It finds application in various electronic devices and provides reliable performance for data storage and retrieval.