AS4C128M16D3-12BINTR

Product Overview

Category

AS4C128M16D3-12BINTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a high-speed volatile memory in various electronic devices, such as computers, servers, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Volatile memory (data is lost when power is turned off)
• Low power consumption
• Compact package size

Package

AS4C128M16D3-12BINTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C128M16D3-12BINTR lies in its ability to provide fast and reliable data storage and retrieval for electronic devices.

Packaging/Quantity

AS4C128M16D3-12BINTR is typically packaged individually and sold in quantities suitable for specific applications.

Specifications

• Part Number: AS4C128M16D3-12BINTR
• Memory Type: DDR3 SDRAM
• Organization: 128M words x 16 bits
• Operating Voltage: 1.5V
• Speed Grade: 12
• Refresh Mode: Auto-refresh and self-refresh
• CAS Latency: 12
• Burst Length: 8
• Interface: 240-pin SODIMM
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of AS4C128M16D3-12BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CK
42. CKE
43. CS#
44. DM0
45. DM1
46. VSS
47. VREF
48. VDD

Functional Features

• High-speed data transfer
• Auto-refresh and self-refresh modes for efficient memory management
• Error correction code (ECC) support for data integrity
• Low power consumption in standby mode
• On-die termination (ODT) for improved signal quality

Advantages and Disadvantages

Advantages

• Fast data access and transfer speeds
• Large storage capacity
• Low power consumption
• Compact form factor
• ECC support for data integrity

Disadvantages

• Volatile memory (data is lost when power is turned off)
• Relatively higher cost compared to other memory technologies

Working Principles

AS4C128M16D3-12BINTR operates based on the principles of dynamic random-access memory. It stores data as electrical charges in tiny capacitors within the memory cells. To read or write data, the memory controller sends appropriate signals to access specific memory locations.

Detailed Application Field Plans

AS4C128M16D3-12BINTR finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Industrial automation systems 5. Medical devices 6. Automotive electronics 7. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C128M16D3-12BINTR include: 1. AS4C256M16D3-12BINTR 2. AS4C512M16D3-12BINTR 3. AS4C1024M16D3-12BINTR 4. AS4C2048M16D3-12BINTR

These models offer similar specifications and functionality but differ in terms of storage capacity.

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